Top-Gate Short Channel Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors with Sub-1.2 nm Equivalent Oxide Thickness

10.1109/jeds.2021.3116763

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Bibliographic Details
Main Authors:	Han, Kaizhen, Samanta, Subhranu, Sun, Chen, Gong, Xiao
Other Authors:	ELECTRICAL AND COMPUTER ENGINEERING
Format:	Article
Published:	Institute of Electrical and Electronics Engineers Inc. 2022
Subjects:	IGZO short channel devices thin film transistors
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/232154
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-232154
record_format	dspace
spelling	sg-nus-scholar.10635-2321542024-04-16T10:49:04Z Top-Gate Short Channel Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors with Sub-1.2 nm Equivalent Oxide Thickness Han, Kaizhen Samanta, Subhranu Sun, Chen Gong, Xiao ELECTRICAL AND COMPUTER ENGINEERING IGZO short channel devices thin film transistors 10.1109/jeds.2021.3116763 IEEE Journal of the Electron Devices Society 9 1125-1130 2022-10-11T08:04:17Z 2022-10-11T08:04:17Z 2021-01-01 Article Han, Kaizhen, Samanta, Subhranu, Sun, Chen, Gong, Xiao (2021-01-01). Top-Gate Short Channel Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors with Sub-1.2 nm Equivalent Oxide Thickness. IEEE Journal of the Electron Devices Society 9 : 1125-1130. ScholarBank@NUS Repository. https://doi.org/10.1109/jeds.2021.3116763 2168-6734 https://scholarbank.nus.edu.sg/handle/10635/232154 Attribution 4.0 International https://creativecommons.org/licenses/by/4.0/ Institute of Electrical and Electronics Engineers Inc. Scopus OA2021
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	IGZO short channel devices thin film transistors
spellingShingle	IGZO short channel devices thin film transistors Han, Kaizhen Samanta, Subhranu Sun, Chen Gong, Xiao Top-Gate Short Channel Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors with Sub-1.2 nm Equivalent Oxide Thickness
description	10.1109/jeds.2021.3116763
author2	ELECTRICAL AND COMPUTER ENGINEERING
author_facet	ELECTRICAL AND COMPUTER ENGINEERING Han, Kaizhen Samanta, Subhranu Sun, Chen Gong, Xiao
format	Article
author	Han, Kaizhen Samanta, Subhranu Sun, Chen Gong, Xiao
author_sort	Han, Kaizhen
title	Top-Gate Short Channel Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors with Sub-1.2 nm Equivalent Oxide Thickness
title_short	Top-Gate Short Channel Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors with Sub-1.2 nm Equivalent Oxide Thickness
title_full	Top-Gate Short Channel Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors with Sub-1.2 nm Equivalent Oxide Thickness
title_fullStr	Top-Gate Short Channel Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors with Sub-1.2 nm Equivalent Oxide Thickness
title_full_unstemmed	Top-Gate Short Channel Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors with Sub-1.2 nm Equivalent Oxide Thickness
title_sort	top-gate short channel amorphous indium-gallium-zinc-oxide thin film transistors with sub-1.2 nm equivalent oxide thickness
publisher	Institute of Electrical and Electronics Engineers Inc.
publishDate	2022
url	https://scholarbank.nus.edu.sg/handle/10635/232154
_version_	1800915594921377792

Top-Gate Short Channel Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors with Sub-1.2 nm Equivalent Oxide Thickness

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