Top-Gate Short Channel Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors with Sub-1.2 nm Equivalent Oxide Thickness
10.1109/jeds.2021.3116763
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| Main Authors: | , , , |
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| 格式: | Article |
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Institute of Electrical and Electronics Engineers Inc.
2022
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| 在線閱讀: | https://scholarbank.nus.edu.sg/handle/10635/232154 |
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| 機構: | National University of Singapore |