Extremely- Scaled Channel Thickness ZnO FET with High Mobility 86 cm2/V-s, Low SS of 83mV/dec and Low Thermal Budget Process (<300°C)

Extremely- Scaled Channel Thickness ZnO FET with High Mobility 86 cm2/V-s, Low SS of 83mV/dec and Low Thermal Budget Process (<300°C)

10.1109/EDTM53872.2022.9798261

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Bibliographic Details
Main Authors: Umesh Chand, Chen Chun-Kuei, Manohar Lal, Sonu Hooda, Hasita Veluri, Zihang Fang, Shih-Hao Tsai, Aaron Voon-Yew Thean
Other Authors: DEAN'S OFFICE (ENGINEERING)
Format: Conference or Workshop Item
Language:English
Published: IEEE 2022
Online Access:https://scholarbank.nus.edu.sg/handle/10635/232257
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Institution: National University of Singapore
Language: English
Description
Summary:10.1109/EDTM53872.2022.9798261

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