Extremely- Scaled Channel Thickness ZnO FET with High Mobility 86 cm2/V-s, Low SS of 83mV/dec and Low Thermal Budget Process (<300°C)
10.1109/EDTM53872.2022.9798261
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| Main Authors: | , , , , , , , |
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| Other Authors: | |
| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
IEEE
2022
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| Online Access: | https://scholarbank.nus.edu.sg/handle/10635/232257 |
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| Institution: | National University of Singapore |
| Language: | English |