Extremely- Scaled Channel Thickness ZnO FET with High Mobility 86 cm2/V-s, Low SS of 83mV/dec and Low Thermal Budget Process (<300°C)

Extremely- Scaled Channel Thickness ZnO FET with High Mobility 86 cm2/V-s, Low SS of 83mV/dec and Low Thermal Budget Process (<300°C)

10.1109/EDTM53872.2022.9798261

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書目詳細資料
Main Authors:	Umesh Chand, Chen Chun-Kuei, Manohar Lal, Sonu Hooda, Hasita Veluri, Zihang Fang, Shih-Hao Tsai, Aaron Voon-Yew Thean
其他作者:	ELECTRICAL AND COMPUTER ENGINEERING
格式:	Conference or Workshop Item
語言:	English
出版:	IEEE 2022
在線閱讀:	https://scholarbank.nus.edu.sg/handle/10635/232257
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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