Extremely- Scaled Channel Thickness ZnO FET with High Mobility 86 cm2/V-s, Low SS of 83mV/dec and Low Thermal Budget Process (<300°C)

10.1109/EDTM53872.2022.9798261

Saved in:

Bibliographic Details
Main Authors:	Umesh Chand, Chen Chun-Kuei, Manohar Lal, Sonu Hooda, Hasita Veluri, Zihang Fang, Shih-Hao Tsai, Aaron Voon-Yew Thean
Other Authors:	DEAN'S OFFICE (ENGINEERING)
Format:	Conference or Workshop Item
Language:	English
Published:	IEEE 2022
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/232257
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore
Language:	English

id	sg-nus-scholar.10635-232257
record_format	dspace
spelling	sg-nus-scholar.10635-2322572024-04-16T11:52:45Z Extremely- Scaled Channel Thickness ZnO FET with High Mobility 86 cm2/V-s, Low SS of 83mV/dec and Low Thermal Budget Process (<300°C) Umesh Chand Chen Chun-Kuei Manohar Lal Sonu Hooda Hasita Veluri Zihang Fang Shih-Hao Tsai Aaron Voon-Yew Thean DEAN'S OFFICE (ENGINEERING) ELECTRICAL AND COMPUTER ENGINEERING 10.1109/EDTM53872.2022.9798261 2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) 2022-10-12T01:00:01Z 2022-10-12T01:00:01Z 2022-03-06 Conference Paper Umesh Chand, Chen Chun-Kuei, Manohar Lal, Sonu Hooda, Hasita Veluri, Zihang Fang, Shih-Hao Tsai, Aaron Voon-Yew Thean (2022-03-06). Extremely- Scaled Channel Thickness ZnO FET with High Mobility 86 cm2/V-s, Low SS of 83mV/dec and Low Thermal Budget Process (<300°C). 2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). ScholarBank@NUS Repository. https://doi.org/10.1109/EDTM53872.2022.9798261 978-1-6654-2179-9 https://scholarbank.nus.edu.sg/handle/10635/232257 en CC0 1.0 Universal http://creativecommons.org/publicdomain/zero/1.0/ IEEE
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
language	English
description	10.1109/EDTM53872.2022.9798261
author2	DEAN'S OFFICE (ENGINEERING)
author_facet	DEAN'S OFFICE (ENGINEERING) Umesh Chand Chen Chun-Kuei Manohar Lal Sonu Hooda Hasita Veluri Zihang Fang Shih-Hao Tsai Aaron Voon-Yew Thean
format	Conference or Workshop Item
author	Umesh Chand Chen Chun-Kuei Manohar Lal Sonu Hooda Hasita Veluri Zihang Fang Shih-Hao Tsai Aaron Voon-Yew Thean
spellingShingle	Umesh Chand Chen Chun-Kuei Manohar Lal Sonu Hooda Hasita Veluri Zihang Fang Shih-Hao Tsai Aaron Voon-Yew Thean Extremely- Scaled Channel Thickness ZnO FET with High Mobility 86 cm2/V-s, Low SS of 83mV/dec and Low Thermal Budget Process (<300°C)
author_sort	Umesh Chand
title	Extremely- Scaled Channel Thickness ZnO FET with High Mobility 86 cm2/V-s, Low SS of 83mV/dec and Low Thermal Budget Process (<300°C)
title_short	Extremely- Scaled Channel Thickness ZnO FET with High Mobility 86 cm2/V-s, Low SS of 83mV/dec and Low Thermal Budget Process (<300°C)
title_full	Extremely- Scaled Channel Thickness ZnO FET with High Mobility 86 cm2/V-s, Low SS of 83mV/dec and Low Thermal Budget Process (<300°C)
title_fullStr	Extremely- Scaled Channel Thickness ZnO FET with High Mobility 86 cm2/V-s, Low SS of 83mV/dec and Low Thermal Budget Process (<300°C)
title_full_unstemmed	Extremely- Scaled Channel Thickness ZnO FET with High Mobility 86 cm2/V-s, Low SS of 83mV/dec and Low Thermal Budget Process (<300°C)
title_sort	extremely- scaled channel thickness zno fet with high mobility 86 cm2/v-s, low ss of 83mv/dec and low thermal budget process (<300°c)
publisher	IEEE
publishDate	2022
url	https://scholarbank.nus.edu.sg/handle/10635/232257
_version_	1800915601266311168

Extremely- Scaled Channel Thickness ZnO FET with High Mobility 86 cm2/V-s, Low SS of 83mV/dec and Low Thermal Budget Process (<300°C)

Similar Items