First Demonstration of Ultra-low Dit Top-Gated Ferroelectric Oxide-Semiconductor Memtransistor with Record Performance by Channel Defect Self-Compensation Effect for BEOL-Compatible Non-Volatile Logic Switch

First Demonstration of Ultra-low Dit Top-Gated Ferroelectric Oxide-Semiconductor Memtransistor with Record Performance by Channel Defect Self-Compensation Effect for BEOL-Compatible Non-Volatile Logic Switch

10.1109/IEDM45625.2022.10019440

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Main Authors: Chun-Kuei Chen, Zihang Fang, Sonu Hooda, Manohar Lal, Umesh Chand, Zefeng Xu, Jieming Pan, Shih-Hao Tsai, Evgeny Zamburg, Aaron Voon-Yew Thean
Other Authors: DEAN'S OFFICE (ENGINEERING)
Format: Conference or Workshop Item
Language:English
Published: IEEE 2022
Online Access:https://scholarbank.nus.edu.sg/handle/10635/232259
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Institution: National University of Singapore
Language: English
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spelling sg-nus-scholar.10635-2322592024-04-17T03:19:18Z First Demonstration of Ultra-low Dit Top-Gated Ferroelectric Oxide-Semiconductor Memtransistor with Record Performance by Channel Defect Self-Compensation Effect for BEOL-Compatible Non-Volatile Logic Switch Chun-Kuei Chen Zihang Fang Sonu Hooda Manohar Lal Umesh Chand Zefeng Xu Jieming Pan Shih-Hao Tsai Evgeny Zamburg Aaron Voon-Yew Thean DEAN'S OFFICE (ENGINEERING) ELECTRICAL AND COMPUTER ENGINEERING 10.1109/IEDM45625.2022.10019440 6.1.1-6.2.4 2022-10-12T02:43:13Z 2022-10-12T02:43:13Z 2022-10-11 Conference Paper Chun-Kuei Chen, Zihang Fang, Sonu Hooda, Manohar Lal, Umesh Chand, Zefeng Xu, Jieming Pan, Shih-Hao Tsai, Evgeny Zamburg, Aaron Voon-Yew Thean (2022-10-11). First Demonstration of Ultra-low Dit Top-Gated Ferroelectric Oxide-Semiconductor Memtransistor with Record Performance by Channel Defect Self-Compensation Effect for BEOL-Compatible Non-Volatile Logic Switch : 6.1.1-6.2.4. ScholarBank@NUS Repository. https://doi.org/10.1109/IEDM45625.2022.10019440 978-1-6654-8959-1 https://scholarbank.nus.edu.sg/handle/10635/232259 en CC0 1.0 Universal http://creativecommons.org/publicdomain/zero/1.0/ IEEE
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
language English
description 10.1109/IEDM45625.2022.10019440
author2 DEAN'S OFFICE (ENGINEERING)
author_facet DEAN'S OFFICE (ENGINEERING)
Chun-Kuei Chen
Zihang Fang
Sonu Hooda
Manohar Lal
Umesh Chand
Zefeng Xu
Jieming Pan
Shih-Hao Tsai
Evgeny Zamburg
Aaron Voon-Yew Thean
format Conference or Workshop Item
author Chun-Kuei Chen
Zihang Fang
Sonu Hooda
Manohar Lal
Umesh Chand
Zefeng Xu
Jieming Pan
Shih-Hao Tsai
Evgeny Zamburg
Aaron Voon-Yew Thean
spellingShingle Chun-Kuei Chen
Zihang Fang
Sonu Hooda
Manohar Lal
Umesh Chand
Zefeng Xu
Jieming Pan
Shih-Hao Tsai
Evgeny Zamburg
Aaron Voon-Yew Thean
First Demonstration of Ultra-low Dit Top-Gated Ferroelectric Oxide-Semiconductor Memtransistor with Record Performance by Channel Defect Self-Compensation Effect for BEOL-Compatible Non-Volatile Logic Switch
author_sort Chun-Kuei Chen
title First Demonstration of Ultra-low Dit Top-Gated Ferroelectric Oxide-Semiconductor Memtransistor with Record Performance by Channel Defect Self-Compensation Effect for BEOL-Compatible Non-Volatile Logic Switch
title_short First Demonstration of Ultra-low Dit Top-Gated Ferroelectric Oxide-Semiconductor Memtransistor with Record Performance by Channel Defect Self-Compensation Effect for BEOL-Compatible Non-Volatile Logic Switch
title_full First Demonstration of Ultra-low Dit Top-Gated Ferroelectric Oxide-Semiconductor Memtransistor with Record Performance by Channel Defect Self-Compensation Effect for BEOL-Compatible Non-Volatile Logic Switch
title_fullStr First Demonstration of Ultra-low Dit Top-Gated Ferroelectric Oxide-Semiconductor Memtransistor with Record Performance by Channel Defect Self-Compensation Effect for BEOL-Compatible Non-Volatile Logic Switch
title_full_unstemmed First Demonstration of Ultra-low Dit Top-Gated Ferroelectric Oxide-Semiconductor Memtransistor with Record Performance by Channel Defect Self-Compensation Effect for BEOL-Compatible Non-Volatile Logic Switch
title_sort first demonstration of ultra-low dit top-gated ferroelectric oxide-semiconductor memtransistor with record performance by channel defect self-compensation effect for beol-compatible non-volatile logic switch
publisher IEEE
publishDate 2022
url https://scholarbank.nus.edu.sg/handle/10635/232259
_version_ 1800915601613389824

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