Vertical Silicon Nanowire Gate-All-Around Tunneling Field Effect Tranistors for Future Low Power Nanoelectronics

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Bibliographic Details
Main Author:	RAMANATHAN GANDHI
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Theses and Dissertations
Language:	English
Published:	2012
Subjects:	Tunneling field effect transistor, subthreshold swing, CMOS technology,vertical Silicon nanowire, energy efficiency
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/30740
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Institution:	National University of Singapore
Language:	English

id	sg-nus-scholar.10635-30740
record_format	dspace
spelling	sg-nus-scholar.10635-307402017-10-21T08:12:13Z Vertical Silicon Nanowire Gate-All-Around Tunneling Field Effect Tranistors for Future Low Power Nanoelectronics RAMANATHAN GANDHI ELECTRICAL & COMPUTER ENGINEERING LEE SUNGJOO CHI DONGZHI Tunneling field effect transistor, subthreshold swing, CMOS technology,vertical Silicon nanowire, energy efficiency Master's MASTER OF ENGINEERING 2012-02-29T18:01:44Z 2012-02-29T18:01:44Z 2011-09-26 Thesis RAMANATHAN GANDHI (2011-09-26). Vertical Silicon Nanowire Gate-All-Around Tunneling Field Effect Tranistors for Future Low Power Nanoelectronics. ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/30740 NOT_IN_WOS en
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
language	English
topic	Tunneling field effect transistor, subthreshold swing, CMOS technology,vertical Silicon nanowire, energy efficiency
spellingShingle	Tunneling field effect transistor, subthreshold swing, CMOS technology,vertical Silicon nanowire, energy efficiency RAMANATHAN GANDHI Vertical Silicon Nanowire Gate-All-Around Tunneling Field Effect Tranistors for Future Low Power Nanoelectronics
description	Master's
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING RAMANATHAN GANDHI
format	Theses and Dissertations
author	RAMANATHAN GANDHI
author_sort	RAMANATHAN GANDHI
title	Vertical Silicon Nanowire Gate-All-Around Tunneling Field Effect Tranistors for Future Low Power Nanoelectronics
title_short	Vertical Silicon Nanowire Gate-All-Around Tunneling Field Effect Tranistors for Future Low Power Nanoelectronics
title_full	Vertical Silicon Nanowire Gate-All-Around Tunneling Field Effect Tranistors for Future Low Power Nanoelectronics
title_fullStr	Vertical Silicon Nanowire Gate-All-Around Tunneling Field Effect Tranistors for Future Low Power Nanoelectronics
title_full_unstemmed	Vertical Silicon Nanowire Gate-All-Around Tunneling Field Effect Tranistors for Future Low Power Nanoelectronics
title_sort	vertical silicon nanowire gate-all-around tunneling field effect tranistors for future low power nanoelectronics
publishDate	2012
url	http://scholarbank.nus.edu.sg/handle/10635/30740
_version_	1681080983988731904

Vertical Silicon Nanowire Gate-All-Around Tunneling Field Effect Tranistors for Future Low Power Nanoelectronics

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