Vertical Silicon Nanowire Gate-All-Around Tunneling Field Effect Tranistors for Future Low Power Nanoelectronics

• Main Author: RAMANATHAN GANDHI
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Theses and Dissertations
• Language: English
• Published: 2012
• Subjects: Tunneling field effect transistor, subthreshold swing, CMOS technology,vertical Silicon nanowire, energy efficiency
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/30740
• Institution: National University of Singapore

Master's