Method to form MOS transistors with shallow junctions using laser annealing

US6335253

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Bibliographic Details
Main Authors: CHONG, YUNG FU, PEY, KIN LEONG, SEE, ALEX, WEE, ANDREW THYE SHEN
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Patent
Published: 2012
Online Access:http://scholarbank.nus.edu.sg/handle/10635/32606
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Institution: National University of Singapore
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Summary:US6335253