Method to form MOS transistors with shallow junctions using laser annealing

US6335253

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Main Authors: CHONG, YUNG FU, PEY, KIN LEONG, SEE, ALEX, WEE, ANDREW THYE SHEN
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Patent
Published: 2012
Online Access:http://scholarbank.nus.edu.sg/handle/10635/32606
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Institution: National University of Singapore
id sg-nus-scholar.10635-32606
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spelling sg-nus-scholar.10635-326062015-07-29T07:03:44Z Method to form MOS transistors with shallow junctions using laser annealing CHONG, YUNG FU PEY, KIN LEONG SEE, ALEX WEE, ANDREW THYE SHEN ELECTRICAL & COMPUTER ENGINEERING PHYSICS CHARTERED SEMICONDUCTOR MANUFACTURING LTD. (SINGAPORE, SG) NATIONAL UNIVERSITY OF SINGAPORE US6335253 Granted Patent 2012-05-02T02:27:42Z 2012-05-02T02:27:42Z 2002-01-01 Patent CHONG, YUNG FU,PEY, KIN LEONG,SEE, ALEX,WEE, ANDREW THYE SHEN (2002-01-01). Method to form MOS transistors with shallow junctions using laser annealing. ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/32606 NOT_IN_WOS PatSnap
institution National University of Singapore
building NUS Library
country Singapore
collection ScholarBank@NUS
description US6335253
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
CHONG, YUNG FU
PEY, KIN LEONG
SEE, ALEX
WEE, ANDREW THYE SHEN
format Patent
author CHONG, YUNG FU
PEY, KIN LEONG
SEE, ALEX
WEE, ANDREW THYE SHEN
spellingShingle CHONG, YUNG FU
PEY, KIN LEONG
SEE, ALEX
WEE, ANDREW THYE SHEN
Method to form MOS transistors with shallow junctions using laser annealing
author_sort CHONG, YUNG FU
title Method to form MOS transistors with shallow junctions using laser annealing
title_short Method to form MOS transistors with shallow junctions using laser annealing
title_full Method to form MOS transistors with shallow junctions using laser annealing
title_fullStr Method to form MOS transistors with shallow junctions using laser annealing
title_full_unstemmed Method to form MOS transistors with shallow junctions using laser annealing
title_sort method to form mos transistors with shallow junctions using laser annealing
publishDate 2012
url http://scholarbank.nus.edu.sg/handle/10635/32606
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