A high-stress liner comprising diamond-like carbon (DLC) for strained p-channel MOSFET

10.1109/LED.2007.914103

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Bibliographic Details
Main Authors:	Tan, K.-M., Zhu, M., Fang, W.-W., Yang, M., Liow, T.-Y., Lee, R.T.P., Hoe, K.M., Tung, C.-H., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Contact etch stop layer (CESL) Diamond-like carbon (DLC) Enhancement Pitch Strain Stress
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/54254
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-54254
record_format	dspace
spelling	sg-nus-scholar.10635-542542024-11-11T18:19:53Z A high-stress liner comprising diamond-like carbon (DLC) for strained p-channel MOSFET Tan, K.-M. Zhu, M. Fang, W.-W. Yang, M. Liow, T.-Y. Lee, R.T.P. Hoe, K.M. Tung, C.-H. Balasubramanian, N. Samudra, G.S. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING Contact etch stop layer (CESL) Diamond-like carbon (DLC) Enhancement Pitch Strain Stress 10.1109/LED.2007.914103 IEEE Electron Device Letters 29 2 192-194 EDLED 2014-06-16T09:29:11Z 2014-06-16T09:29:11Z 2008-02 Article Tan, K.-M., Zhu, M., Fang, W.-W., Yang, M., Liow, T.-Y., Lee, R.T.P., Hoe, K.M., Tung, C.-H., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C. (2008-02). A high-stress liner comprising diamond-like carbon (DLC) for strained p-channel MOSFET. IEEE Electron Device Letters 29 (2) : 192-194. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.914103 07413106 http://scholarbank.nus.edu.sg/handle/10635/54254 000252622800019 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Contact etch stop layer (CESL) Diamond-like carbon (DLC) Enhancement Pitch Strain Stress
spellingShingle	Contact etch stop layer (CESL) Diamond-like carbon (DLC) Enhancement Pitch Strain Stress Tan, K.-M. Zhu, M. Fang, W.-W. Yang, M. Liow, T.-Y. Lee, R.T.P. Hoe, K.M. Tung, C.-H. Balasubramanian, N. Samudra, G.S. Yeo, Y.-C. A high-stress liner comprising diamond-like carbon (DLC) for strained p-channel MOSFET
description	10.1109/LED.2007.914103
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Tan, K.-M. Zhu, M. Fang, W.-W. Yang, M. Liow, T.-Y. Lee, R.T.P. Hoe, K.M. Tung, C.-H. Balasubramanian, N. Samudra, G.S. Yeo, Y.-C.
format	Article
author	Tan, K.-M. Zhu, M. Fang, W.-W. Yang, M. Liow, T.-Y. Lee, R.T.P. Hoe, K.M. Tung, C.-H. Balasubramanian, N. Samudra, G.S. Yeo, Y.-C.
author_sort	Tan, K.-M.
title	A high-stress liner comprising diamond-like carbon (DLC) for strained p-channel MOSFET
title_short	A high-stress liner comprising diamond-like carbon (DLC) for strained p-channel MOSFET
title_full	A high-stress liner comprising diamond-like carbon (DLC) for strained p-channel MOSFET
title_fullStr	A high-stress liner comprising diamond-like carbon (DLC) for strained p-channel MOSFET
title_full_unstemmed	A high-stress liner comprising diamond-like carbon (DLC) for strained p-channel MOSFET
title_sort	high-stress liner comprising diamond-like carbon (dlc) for strained p-channel mosfet
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/54254
_version_	1821207777400324096

A high-stress liner comprising diamond-like carbon (DLC) for strained p-channel MOSFET

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