A high-stress liner comprising diamond-like carbon (DLC) for strained p-channel MOSFET

• Main Authors: Tan, K.-M., Zhu, M., Fang, W.-W., Yang, M., Liow, T.-Y., Lee, R.T.P., Hoe, K.M., Tung, C.-H., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Contact etch stop layer (CESL); Diamond-like carbon (DLC); Enhancement; Pitch; Strain; Stress
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/54254
• Institution: National University of Singapore

10.1109/LED.2007.914103