A model for minority carrier lifetime variation in the oxide-silicon structure following 253.7 nm ultraviolet irradiation
Journal of Applied Physics
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sg-nus-scholar.10635-543972024-11-08T22:09:19Z A model for minority carrier lifetime variation in the oxide-silicon structure following 253.7 nm ultraviolet irradiation Cheng, Z.Y. Ling, C.H. ELECTRICAL ENGINEERING Journal of Applied Physics 83 10 5289-5294 JAPIA 2014-06-16T09:30:42Z 2014-06-16T09:30:42Z 1998-05-15 Article Cheng, Z.Y.,Ling, C.H. (1998-05-15). A model for minority carrier lifetime variation in the oxide-silicon structure following 253.7 nm ultraviolet irradiation. Journal of Applied Physics 83 (10) : 5289-5294. ScholarBank@NUS Repository. 00218979 http://scholarbank.nus.edu.sg/handle/10635/54397 NOT_IN_WOS Scopus |
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Journal of Applied Physics |
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ELECTRICAL ENGINEERING |
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ELECTRICAL ENGINEERING Cheng, Z.Y. Ling, C.H. |
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Cheng, Z.Y. Ling, C.H. |
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Cheng, Z.Y. Ling, C.H. A model for minority carrier lifetime variation in the oxide-silicon structure following 253.7 nm ultraviolet irradiation |
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Cheng, Z.Y. |
title |
A model for minority carrier lifetime variation in the oxide-silicon structure following 253.7 nm ultraviolet irradiation |
title_short |
A model for minority carrier lifetime variation in the oxide-silicon structure following 253.7 nm ultraviolet irradiation |
title_full |
A model for minority carrier lifetime variation in the oxide-silicon structure following 253.7 nm ultraviolet irradiation |
title_fullStr |
A model for minority carrier lifetime variation in the oxide-silicon structure following 253.7 nm ultraviolet irradiation |
title_full_unstemmed |
A model for minority carrier lifetime variation in the oxide-silicon structure following 253.7 nm ultraviolet irradiation |
title_sort |
model for minority carrier lifetime variation in the oxide-silicon structure following 253.7 nm ultraviolet irradiation |
publishDate |
2014 |
url |
http://scholarbank.nus.edu.sg/handle/10635/54397 |
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1821212739666706432 |