A model for minority carrier lifetime variation in the oxide-silicon structure following 253.7 nm ultraviolet irradiation

Journal of Applied Physics

Saved in:
Bibliographic Details
Main Authors: Cheng, Z.Y., Ling, C.H.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/54397
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore
id sg-nus-scholar.10635-54397
record_format dspace
spelling sg-nus-scholar.10635-543972024-11-08T22:09:19Z A model for minority carrier lifetime variation in the oxide-silicon structure following 253.7 nm ultraviolet irradiation Cheng, Z.Y. Ling, C.H. ELECTRICAL ENGINEERING Journal of Applied Physics 83 10 5289-5294 JAPIA 2014-06-16T09:30:42Z 2014-06-16T09:30:42Z 1998-05-15 Article Cheng, Z.Y.,Ling, C.H. (1998-05-15). A model for minority carrier lifetime variation in the oxide-silicon structure following 253.7 nm ultraviolet irradiation. Journal of Applied Physics 83 (10) : 5289-5294. ScholarBank@NUS Repository. 00218979 http://scholarbank.nus.edu.sg/handle/10635/54397 NOT_IN_WOS Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
description Journal of Applied Physics
author2 ELECTRICAL ENGINEERING
author_facet ELECTRICAL ENGINEERING
Cheng, Z.Y.
Ling, C.H.
format Article
author Cheng, Z.Y.
Ling, C.H.
spellingShingle Cheng, Z.Y.
Ling, C.H.
A model for minority carrier lifetime variation in the oxide-silicon structure following 253.7 nm ultraviolet irradiation
author_sort Cheng, Z.Y.
title A model for minority carrier lifetime variation in the oxide-silicon structure following 253.7 nm ultraviolet irradiation
title_short A model for minority carrier lifetime variation in the oxide-silicon structure following 253.7 nm ultraviolet irradiation
title_full A model for minority carrier lifetime variation in the oxide-silicon structure following 253.7 nm ultraviolet irradiation
title_fullStr A model for minority carrier lifetime variation in the oxide-silicon structure following 253.7 nm ultraviolet irradiation
title_full_unstemmed A model for minority carrier lifetime variation in the oxide-silicon structure following 253.7 nm ultraviolet irradiation
title_sort model for minority carrier lifetime variation in the oxide-silicon structure following 253.7 nm ultraviolet irradiation
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/54397
_version_ 1821212739666706432