A model for minority carrier lifetime variation in the oxide-silicon structure following 253.7 nm ultraviolet irradiation
Journal of Applied Physics
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Main Authors: | Cheng, Z.Y., Ling, C.H. |
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Other Authors: | ELECTRICAL ENGINEERING |
Format: | Article |
Published: |
2014
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Online Access: | http://scholarbank.nus.edu.sg/handle/10635/54397 |
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Institution: | National University of Singapore |
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