A simple technology for superjunction device fabrication: Polyflanked VDMOSFET
10.1109/LED.2002.803770
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sg-nus-scholar.10635-548102023-10-26T21:40:17Z A simple technology for superjunction device fabrication: Polyflanked VDMOSFET Gan, K.P. Yang, X. Liang, Y.C. Samudra, G.S. Yong, L. ELECTRICAL & COMPUTER ENGINEERING Power MOSFET Superjunction device 10.1109/LED.2002.803770 IEEE Electron Device Letters 23 10 627-629 EDLED 2014-06-17T02:35:47Z 2014-06-17T02:35:47Z 2002-10 Article Gan, K.P., Yang, X., Liang, Y.C., Samudra, G.S., Yong, L. (2002-10). A simple technology for superjunction device fabrication: Polyflanked VDMOSFET. IEEE Electron Device Letters 23 (10) : 627-629. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2002.803770 07413106 http://scholarbank.nus.edu.sg/handle/10635/54810 000178497900019 Scopus |
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Power MOSFET Superjunction device |
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Power MOSFET Superjunction device Gan, K.P. Yang, X. Liang, Y.C. Samudra, G.S. Yong, L. A simple technology for superjunction device fabrication: Polyflanked VDMOSFET |
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10.1109/LED.2002.803770 |
author2 |
ELECTRICAL & COMPUTER ENGINEERING |
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ELECTRICAL & COMPUTER ENGINEERING Gan, K.P. Yang, X. Liang, Y.C. Samudra, G.S. Yong, L. |
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Article |
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Gan, K.P. Yang, X. Liang, Y.C. Samudra, G.S. Yong, L. |
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Gan, K.P. |
title |
A simple technology for superjunction device fabrication: Polyflanked VDMOSFET |
title_short |
A simple technology for superjunction device fabrication: Polyflanked VDMOSFET |
title_full |
A simple technology for superjunction device fabrication: Polyflanked VDMOSFET |
title_fullStr |
A simple technology for superjunction device fabrication: Polyflanked VDMOSFET |
title_full_unstemmed |
A simple technology for superjunction device fabrication: Polyflanked VDMOSFET |
title_sort |
simple technology for superjunction device fabrication: polyflanked vdmosfet |
publishDate |
2014 |
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http://scholarbank.nus.edu.sg/handle/10635/54810 |
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