A simple technology for superjunction device fabrication: Polyflanked VDMOSFET

• Main Authors: Gan, K.P., Yang, X., Liang, Y.C., Samudra, G.S., Yong, L.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Power MOSFET; Superjunction device
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/54810
• Institution: National University of Singapore

10.1109/LED.2002.803770