Achieving sub-0.1 ev hole schottky barrier height for NiSiGe on SiGe by aluminum segregation

10.1149/1.3072677

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Bibliographic Details
Main Authors: Sinha, M., Lee, R.T.P., Lohani, A., Mhaisalkar, S., Chor, E.F., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/54875
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-548752023-10-27T09:37:11Z Achieving sub-0.1 ev hole schottky barrier height for NiSiGe on SiGe by aluminum segregation Sinha, M. Lee, R.T.P. Lohani, A. Mhaisalkar, S. Chor, E.F. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1149/1.3072677 Journal of the Electrochemical Society 156 4 H233-H238 JESOA 2014-06-17T02:36:31Z 2014-06-17T02:36:31Z 2009 Article Sinha, M., Lee, R.T.P., Lohani, A., Mhaisalkar, S., Chor, E.F., Yeo, Y.-C. (2009). Achieving sub-0.1 ev hole schottky barrier height for NiSiGe on SiGe by aluminum segregation. Journal of the Electrochemical Society 156 (4) : H233-H238. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3072677 00134651 http://scholarbank.nus.edu.sg/handle/10635/54875 000263717900050 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
description 10.1149/1.3072677
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Sinha, M.
Lee, R.T.P.
Lohani, A.
Mhaisalkar, S.
Chor, E.F.
Yeo, Y.-C.
format Article
author Sinha, M.
Lee, R.T.P.
Lohani, A.
Mhaisalkar, S.
Chor, E.F.
Yeo, Y.-C.
spellingShingle Sinha, M.
Lee, R.T.P.
Lohani, A.
Mhaisalkar, S.
Chor, E.F.
Yeo, Y.-C.
Achieving sub-0.1 ev hole schottky barrier height for NiSiGe on SiGe by aluminum segregation
author_sort Sinha, M.
title Achieving sub-0.1 ev hole schottky barrier height for NiSiGe on SiGe by aluminum segregation
title_short Achieving sub-0.1 ev hole schottky barrier height for NiSiGe on SiGe by aluminum segregation
title_full Achieving sub-0.1 ev hole schottky barrier height for NiSiGe on SiGe by aluminum segregation
title_fullStr Achieving sub-0.1 ev hole schottky barrier height for NiSiGe on SiGe by aluminum segregation
title_full_unstemmed Achieving sub-0.1 ev hole schottky barrier height for NiSiGe on SiGe by aluminum segregation
title_sort achieving sub-0.1 ev hole schottky barrier height for nisige on sige by aluminum segregation
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/54875
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