Achieving sub-0.1 ev hole schottky barrier height for NiSiGe on SiGe by aluminum segregation
10.1149/1.3072677
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sg-nus-scholar.10635-548752023-10-27T09:37:11Z Achieving sub-0.1 ev hole schottky barrier height for NiSiGe on SiGe by aluminum segregation Sinha, M. Lee, R.T.P. Lohani, A. Mhaisalkar, S. Chor, E.F. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1149/1.3072677 Journal of the Electrochemical Society 156 4 H233-H238 JESOA 2014-06-17T02:36:31Z 2014-06-17T02:36:31Z 2009 Article Sinha, M., Lee, R.T.P., Lohani, A., Mhaisalkar, S., Chor, E.F., Yeo, Y.-C. (2009). Achieving sub-0.1 ev hole schottky barrier height for NiSiGe on SiGe by aluminum segregation. Journal of the Electrochemical Society 156 (4) : H233-H238. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3072677 00134651 http://scholarbank.nus.edu.sg/handle/10635/54875 000263717900050 Scopus |
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ELECTRICAL & COMPUTER ENGINEERING |
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ELECTRICAL & COMPUTER ENGINEERING Sinha, M. Lee, R.T.P. Lohani, A. Mhaisalkar, S. Chor, E.F. Yeo, Y.-C. |
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Sinha, M. Lee, R.T.P. Lohani, A. Mhaisalkar, S. Chor, E.F. Yeo, Y.-C. |
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Sinha, M. Lee, R.T.P. Lohani, A. Mhaisalkar, S. Chor, E.F. Yeo, Y.-C. Achieving sub-0.1 ev hole schottky barrier height for NiSiGe on SiGe by aluminum segregation |
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Sinha, M. |
title |
Achieving sub-0.1 ev hole schottky barrier height for NiSiGe on SiGe by aluminum segregation |
title_short |
Achieving sub-0.1 ev hole schottky barrier height for NiSiGe on SiGe by aluminum segregation |
title_full |
Achieving sub-0.1 ev hole schottky barrier height for NiSiGe on SiGe by aluminum segregation |
title_fullStr |
Achieving sub-0.1 ev hole schottky barrier height for NiSiGe on SiGe by aluminum segregation |
title_full_unstemmed |
Achieving sub-0.1 ev hole schottky barrier height for NiSiGe on SiGe by aluminum segregation |
title_sort |
achieving sub-0.1 ev hole schottky barrier height for nisige on sige by aluminum segregation |
publishDate |
2014 |
url |
http://scholarbank.nus.edu.sg/handle/10635/54875 |
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1781412038221758464 |