Diamond-like carbon (DLC) liner: A new stressor for P-channel multiple-gate field-effect transistors

• Main Authors: Tan, K.-M., Fang, W.-W., Yang, M., Liow, T.-Y., Lee, R.T.-P., Balasubramanian, N., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Contact etch stop layer (CESL); Diamond-like carbon (DLC); FinFET; Multiple-gate; Strain
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/55632
• Institution: National University of Singapore

10.1109/LED.2008.923710