Direct tunneling currents through gate dielectrics in deep submicron MOSFETs

Direct tunneling currents through gate dielectrics in deep submicron MOSFETs

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

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Bibliographic Details
Main Authors: Hou, Y., Li, M., Jin, Y.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Subjects:
Direct tunneling current
Gate dielectrics
MOSFET
Quantum effect
Online Access:http://scholarbank.nus.edu.sg/handle/10635/55657
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Institution: National University of Singapore
Description
Summary:Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

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