Energy distribution of interface traps in germanium metal-oxide- semiconductor field effect transistors with HfO2 gate dielectric and its impact on mobility

Energy distribution of interface traps in germanium metal-oxide- semiconductor field effect transistors with HfO2 gate dielectric and its impact on mobility

10.1063/1.2976632

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Bibliographic Details
Main Authors: Xie, R., Wu, N., Shen, C., Zhu, C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/55868
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Institution: National University of Singapore
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Summary:10.1063/1.2976632

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