Energy distribution of interface traps in germanium metal-oxide- semiconductor field effect transistors with HfO2 gate dielectric and its impact on mobility

10.1063/1.2976632

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Main Authors: Xie, R., Wu, N., Shen, C., Zhu, C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/55868
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-558682023-10-25T23:29:49Z Energy distribution of interface traps in germanium metal-oxide- semiconductor field effect transistors with HfO2 gate dielectric and its impact on mobility Xie, R. Wu, N. Shen, C. Zhu, C. ELECTRICAL & COMPUTER ENGINEERING 10.1063/1.2976632 Applied Physics Letters 93 8 - APPLA 2014-06-17T02:48:03Z 2014-06-17T02:48:03Z 2008 Article Xie, R., Wu, N., Shen, C., Zhu, C. (2008). Energy distribution of interface traps in germanium metal-oxide- semiconductor field effect transistors with HfO2 gate dielectric and its impact on mobility. Applied Physics Letters 93 (8) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2976632 00036951 http://scholarbank.nus.edu.sg/handle/10635/55868 000259011900109 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
description 10.1063/1.2976632
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Xie, R.
Wu, N.
Shen, C.
Zhu, C.
format Article
author Xie, R.
Wu, N.
Shen, C.
Zhu, C.
spellingShingle Xie, R.
Wu, N.
Shen, C.
Zhu, C.
Energy distribution of interface traps in germanium metal-oxide- semiconductor field effect transistors with HfO2 gate dielectric and its impact on mobility
author_sort Xie, R.
title Energy distribution of interface traps in germanium metal-oxide- semiconductor field effect transistors with HfO2 gate dielectric and its impact on mobility
title_short Energy distribution of interface traps in germanium metal-oxide- semiconductor field effect transistors with HfO2 gate dielectric and its impact on mobility
title_full Energy distribution of interface traps in germanium metal-oxide- semiconductor field effect transistors with HfO2 gate dielectric and its impact on mobility
title_fullStr Energy distribution of interface traps in germanium metal-oxide- semiconductor field effect transistors with HfO2 gate dielectric and its impact on mobility
title_full_unstemmed Energy distribution of interface traps in germanium metal-oxide- semiconductor field effect transistors with HfO2 gate dielectric and its impact on mobility
title_sort energy distribution of interface traps in germanium metal-oxide- semiconductor field effect transistors with hfo2 gate dielectric and its impact on mobility
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/55868
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