Feasibility study of using thin aluminum nitride film as a buffer layer for dual metal gate process

Feasibility study of using thin aluminum nitride film as a buffer layer for dual metal gate process

10.1016/j.tsf.2004.05.083

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Bibliographic Details
Main Authors: Park, C.S., Cho, B.J., Balasubramanian, N., Kwong, D.-L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Aluminum nitride
CMOS
Metal gate
Work function
Online Access:http://scholarbank.nus.edu.sg/handle/10635/56032
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Institution: National University of Singapore
Description
Summary:10.1016/j.tsf.2004.05.083

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