Feasibility study of using thin aluminum nitride film as a buffer layer for dual metal gate process

Feasibility study of using thin aluminum nitride film as a buffer layer for dual metal gate process

10.1016/j.tsf.2004.05.083

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Bibliographic Details
Main Authors: Park, C.S., Cho, B.J., Balasubramanian, N., Kwong, D.-L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Aluminum nitride
CMOS
Metal gate
Work function
Online Access:http://scholarbank.nus.edu.sg/handle/10635/56032
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Institution: National University of Singapore
id sg-nus-scholar.10635-56032
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spelling sg-nus-scholar.10635-560322023-10-29T23:04:17Z Feasibility study of using thin aluminum nitride film as a buffer layer for dual metal gate process Park, C.S. Cho, B.J. Balasubramanian, N. Kwong, D.-L. ELECTRICAL & COMPUTER ENGINEERING Aluminum nitride CMOS Metal gate Work function 10.1016/j.tsf.2004.05.083 Thin Solid Films 462-463 SPEC. ISS. 15-18 THSFA 2014-06-17T02:49:56Z 2014-06-17T02:49:56Z 2004-09 Article Park, C.S., Cho, B.J., Balasubramanian, N., Kwong, D.-L. (2004-09). Feasibility study of using thin aluminum nitride film as a buffer layer for dual metal gate process. Thin Solid Films 462-463 (SPEC. ISS.) : 15-18. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2004.05.083 00406090 http://scholarbank.nus.edu.sg/handle/10635/56032 000223812800005 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
topic Aluminum nitride
CMOS
Metal gate
Work function
spellingShingle Aluminum nitride
CMOS
Metal gate
Work function
Park, C.S.
Cho, B.J.
Balasubramanian, N.
Kwong, D.-L.
Feasibility study of using thin aluminum nitride film as a buffer layer for dual metal gate process
description 10.1016/j.tsf.2004.05.083
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Park, C.S.
Cho, B.J.
Balasubramanian, N.
Kwong, D.-L.
format Article
author Park, C.S.
Cho, B.J.
Balasubramanian, N.
Kwong, D.-L.
author_sort Park, C.S.
title Feasibility study of using thin aluminum nitride film as a buffer layer for dual metal gate process
title_short Feasibility study of using thin aluminum nitride film as a buffer layer for dual metal gate process
title_full Feasibility study of using thin aluminum nitride film as a buffer layer for dual metal gate process
title_fullStr Feasibility study of using thin aluminum nitride film as a buffer layer for dual metal gate process
title_full_unstemmed Feasibility study of using thin aluminum nitride film as a buffer layer for dual metal gate process
title_sort feasibility study of using thin aluminum nitride film as a buffer layer for dual metal gate process
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/56032
_version_ 1781781101231996928

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