Germanium multiple-gate field-effect transistor with in situ boron-doped raised source/drain

10.1109/TED.2013.2262135

Saved in:

Bibliographic Details
Main Authors:	Liu, B., Zhan, C., Yang, Y., Cheng, R., Guo, P., Zhou, Q., Kong, E.Y.-J., Daval, N., Veytizou, C., Delprat, D., Nguyen, B.-Y., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Germanium (Ge) Germanium-on-Insulator (GeOI) in situ dope multiple-gate field-effect transistor (MuGFET) raised source/drain (RSD)
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/56135
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

id	sg-nus-scholar.10635-56135
record_format	dspace
spelling	sg-nus-scholar.10635-561352023-10-26T20:25:35Z Germanium multiple-gate field-effect transistor with in situ boron-doped raised source/drain Liu, B. Zhan, C. Yang, Y. Cheng, R. Guo, P. Zhou, Q. Kong, E.Y.-J. Daval, N. Veytizou, C. Delprat, D. Nguyen, B.-Y. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING Germanium (Ge) Germanium-on-Insulator (GeOI) in situ dope multiple-gate field-effect transistor (MuGFET) raised source/drain (RSD) 10.1109/TED.2013.2262135 IEEE Transactions on Electron Devices 60 7 2135-2141 IETDA 2014-06-17T02:51:08Z 2014-06-17T02:51:08Z 2013 Article Liu, B., Zhan, C., Yang, Y., Cheng, R., Guo, P., Zhou, Q., Kong, E.Y.-J., Daval, N., Veytizou, C., Delprat, D., Nguyen, B.-Y., Yeo, Y.-C. (2013). Germanium multiple-gate field-effect transistor with in situ boron-doped raised source/drain. IEEE Transactions on Electron Devices 60 (7) : 2135-2141. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2013.2262135 00189383 http://scholarbank.nus.edu.sg/handle/10635/56135 000320870000007 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Germanium (Ge) Germanium-on-Insulator (GeOI) in situ dope multiple-gate field-effect transistor (MuGFET) raised source/drain (RSD)
spellingShingle	Germanium (Ge) Germanium-on-Insulator (GeOI) in situ dope multiple-gate field-effect transistor (MuGFET) raised source/drain (RSD) Liu, B. Zhan, C. Yang, Y. Cheng, R. Guo, P. Zhou, Q. Kong, E.Y.-J. Daval, N. Veytizou, C. Delprat, D. Nguyen, B.-Y. Yeo, Y.-C. Germanium multiple-gate field-effect transistor with in situ boron-doped raised source/drain
description	10.1109/TED.2013.2262135
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Liu, B. Zhan, C. Yang, Y. Cheng, R. Guo, P. Zhou, Q. Kong, E.Y.-J. Daval, N. Veytizou, C. Delprat, D. Nguyen, B.-Y. Yeo, Y.-C.
format	Article
author	Liu, B. Zhan, C. Yang, Y. Cheng, R. Guo, P. Zhou, Q. Kong, E.Y.-J. Daval, N. Veytizou, C. Delprat, D. Nguyen, B.-Y. Yeo, Y.-C.
author_sort	Liu, B.
title	Germanium multiple-gate field-effect transistor with in situ boron-doped raised source/drain
title_short	Germanium multiple-gate field-effect transistor with in situ boron-doped raised source/drain
title_full	Germanium multiple-gate field-effect transistor with in situ boron-doped raised source/drain
title_fullStr	Germanium multiple-gate field-effect transistor with in situ boron-doped raised source/drain
title_full_unstemmed	Germanium multiple-gate field-effect transistor with in situ boron-doped raised source/drain
title_sort	germanium multiple-gate field-effect transistor with in situ boron-doped raised source/drain
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/56135
_version_	1781781116054667264

Germanium multiple-gate field-effect transistor with in situ boron-doped raised source/drain

Similar Items