Germanium multiple-gate field-effect transistor with in situ boron-doped raised source/drain

• Main Authors: Liu, B., Zhan, C., Yang, Y., Cheng, R., Guo, P., Zhou, Q., Kong, E.Y.-J., Daval, N., Veytizou, C., Delprat, D., Nguyen, B.-Y., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Germanium (Ge); Germanium-on-Insulator (GeOI); in situ dope; multiple-gate field-effect transistor (MuGFET); raised source/drain (RSD)
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/56135
• Institution: National University of Singapore

10.1109/TED.2013.2262135