Impact of interfacial layer control using Gd2 O3 in Hf O2 gate dielectric on GaAs

Impact of interfacial layer control using Gd2 O3 in Hf O2 gate dielectric on GaAs

10.1063/1.2732821

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Bibliographic Details
Main Authors: Dalapati, G.K., Tong, Y., Loh, W.Y., Mun, H.K., Cho, B.J.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/56265
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/56265

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