Improvement in the internal quantum efficiency of InN grown over nanoporous GaN by the reduction of Shockley-Read-Hall recombination centers

Improvement in the internal quantum efficiency of InN grown over nanoporous GaN by the reduction of Shockley-Read-Hall recombination centers

10.1063/1.4821204

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Bibliographic Details
Main Authors: Seetoh, I.P., Soh, C.B., Zhang, L., Patrick Tung, K.H., Fitzgerald, E.A., Jin Chua, S.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/56286
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Institution: National University of Singapore
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Summary:10.1063/1.4821204

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