Improvement in the internal quantum efficiency of InN grown over nanoporous GaN by the reduction of Shockley-Read-Hall recombination centers

10.1063/1.4821204

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Bibliographic Details
Main Authors:	Seetoh, I.P., Soh, C.B., Zhang, L., Patrick Tung, K.H., Fitzgerald, E.A., Jin Chua, S.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/56286
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Institution:	National University of Singapore

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spelling	sg-nus-scholar.10635-562862023-10-26T07:43:15Z Improvement in the internal quantum efficiency of InN grown over nanoporous GaN by the reduction of Shockley-Read-Hall recombination centers Seetoh, I.P. Soh, C.B. Zhang, L. Patrick Tung, K.H. Fitzgerald, E.A. Jin Chua, S. ELECTRICAL & COMPUTER ENGINEERING PHYSICS 10.1063/1.4821204 Applied Physics Letters 103 12 - APPLA 2014-06-17T02:52:52Z 2014-06-17T02:52:52Z 2013-09-16 Article Seetoh, I.P., Soh, C.B., Zhang, L., Patrick Tung, K.H., Fitzgerald, E.A., Jin Chua, S. (2013-09-16). Improvement in the internal quantum efficiency of InN grown over nanoporous GaN by the reduction of Shockley-Read-Hall recombination centers. Applied Physics Letters 103 (12) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4821204 00036951 http://scholarbank.nus.edu.sg/handle/10635/56286 000324826000022 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1063/1.4821204
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Seetoh, I.P. Soh, C.B. Zhang, L. Patrick Tung, K.H. Fitzgerald, E.A. Jin Chua, S.
format	Article
author	Seetoh, I.P. Soh, C.B. Zhang, L. Patrick Tung, K.H. Fitzgerald, E.A. Jin Chua, S.
spellingShingle	Seetoh, I.P. Soh, C.B. Zhang, L. Patrick Tung, K.H. Fitzgerald, E.A. Jin Chua, S. Improvement in the internal quantum efficiency of InN grown over nanoporous GaN by the reduction of Shockley-Read-Hall recombination centers
author_sort	Seetoh, I.P.
title	Improvement in the internal quantum efficiency of InN grown over nanoporous GaN by the reduction of Shockley-Read-Hall recombination centers
title_short	Improvement in the internal quantum efficiency of InN grown over nanoporous GaN by the reduction of Shockley-Read-Hall recombination centers
title_full	Improvement in the internal quantum efficiency of InN grown over nanoporous GaN by the reduction of Shockley-Read-Hall recombination centers
title_fullStr	Improvement in the internal quantum efficiency of InN grown over nanoporous GaN by the reduction of Shockley-Read-Hall recombination centers
title_full_unstemmed	Improvement in the internal quantum efficiency of InN grown over nanoporous GaN by the reduction of Shockley-Read-Hall recombination centers
title_sort	improvement in the internal quantum efficiency of inn grown over nanoporous gan by the reduction of shockley-read-hall recombination centers
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/56286
_version_	1781781145740902400

Improvement in the internal quantum efficiency of InN grown over nanoporous GaN by the reduction of Shockley-Read-Hall recombination centers

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