Improvement in the internal quantum efficiency of InN grown over nanoporous GaN by the reduction of Shockley-Read-Hall recombination centers
10.1063/1.4821204
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Main Authors: | Seetoh, I.P., Soh, C.B., Zhang, L., Patrick Tung, K.H., Fitzgerald, E.A., Jin Chua, S. |
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Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Article |
Published: |
2014
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Online Access: | http://scholarbank.nus.edu.sg/handle/10635/56286 |
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Institution: | National University of Singapore |
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