Improvement in the internal quantum efficiency of InN grown over nanoporous GaN by the reduction of Shockley-Read-Hall recombination centers

• Main Authors: Seetoh, I.P., Soh, C.B., Zhang, L., Patrick Tung, K.H., Fitzgerald, E.A., Jin Chua, S.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/56286
• Institution: National University of Singapore

10.1063/1.4821204