InGaN self-assembled quantum dots grown by metalorganic chemical-vapor deposition with indium as the antisurfactant

10.1063/1.1433163

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Main Authors:	Zhang, J., Hao, M., Li, P., Chua, S.J.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/56337
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-56337
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spelling	sg-nus-scholar.10635-563372023-10-26T20:25:24Z InGaN self-assembled quantum dots grown by metalorganic chemical-vapor deposition with indium as the antisurfactant Zhang, J. Hao, M. Li, P. Chua, S.J. ELECTRICAL & COMPUTER ENGINEERING 10.1063/1.1433163 Applied Physics Letters 80 3 485-487 APPLA 2014-06-17T02:53:27Z 2014-06-17T02:53:27Z 2002-01-21 Article Zhang, J., Hao, M., Li, P., Chua, S.J. (2002-01-21). InGaN self-assembled quantum dots grown by metalorganic chemical-vapor deposition with indium as the antisurfactant. Applied Physics Letters 80 (3) : 485-487. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1433163 00036951 http://scholarbank.nus.edu.sg/handle/10635/56337 000173278400049 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1063/1.1433163
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Zhang, J. Hao, M. Li, P. Chua, S.J.
format	Article
author	Zhang, J. Hao, M. Li, P. Chua, S.J.
spellingShingle	Zhang, J. Hao, M. Li, P. Chua, S.J. InGaN self-assembled quantum dots grown by metalorganic chemical-vapor deposition with indium as the antisurfactant
author_sort	Zhang, J.
title	InGaN self-assembled quantum dots grown by metalorganic chemical-vapor deposition with indium as the antisurfactant
title_short	InGaN self-assembled quantum dots grown by metalorganic chemical-vapor deposition with indium as the antisurfactant
title_full	InGaN self-assembled quantum dots grown by metalorganic chemical-vapor deposition with indium as the antisurfactant
title_fullStr	InGaN self-assembled quantum dots grown by metalorganic chemical-vapor deposition with indium as the antisurfactant
title_full_unstemmed	InGaN self-assembled quantum dots grown by metalorganic chemical-vapor deposition with indium as the antisurfactant
title_sort	ingan self-assembled quantum dots grown by metalorganic chemical-vapor deposition with indium as the antisurfactant
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/56337
_version_	1781781156120756224

InGaN self-assembled quantum dots grown by metalorganic chemical-vapor deposition with indium as the antisurfactant

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