InGaN self-assembled quantum dots grown by metalorganic chemical-vapor deposition with indium as the antisurfactant
10.1063/1.1433163
Saved in:
Main Authors: | Zhang, J., Hao, M., Li, P., Chua, S.J. |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/56337 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Phase separation in Zn-doped InGaN grown by metalorganic chemical vapor deposition
by: Feng, Z.C., et al.
Published: (2014) -
Luminescence, morphology and X-ray diffraction features of InGaN materials grown on sapphire by metalorganic chemical vapor deposition
by: Li, P., et al.
Published: (2014) -
Growth of InN and its effect on InGaN epilayer by metalorganic chemical vapor deposition
by: Hartono, H., et al.
Published: (2014) -
Photoluminescence and photoelectron spectroscopic analysis of InGaAsN grown by metalorganic chemical vapor deposition
by: Chang, W., et al.
Published: (2014) -
Structural and optical properties of GaN materials grown on Si by metalorganic chemical vapor deposition
by: Chen, J.L., et al.
Published: (2014)