InGaN self-assembled quantum dots grown by metalorganic chemical-vapor deposition with indium as the antisurfactant

10.1063/1.1433163

Saved in:
Bibliographic Details
Main Authors: Zhang, J., Hao, M., Li, P., Chua, S.J.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/56337
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore