InGaN self-assembled quantum dots grown by metalorganic chemical-vapor deposition with indium as the antisurfactant

10.1063/1.1433163

Saved in:
書目詳細資料
Main Authors: Zhang, J., Hao, M., Li, P., Chua, S.J.
其他作者: ELECTRICAL & COMPUTER ENGINEERING
格式: Article
出版: 2014
在線閱讀:http://scholarbank.nus.edu.sg/handle/10635/56337
標簽: 添加標簽
沒有標簽, 成為第一個標記此記錄!
機構: National University of Singapore
id sg-nus-scholar.10635-56337
record_format dspace
spelling sg-nus-scholar.10635-563372024-11-14T02:29:19Z InGaN self-assembled quantum dots grown by metalorganic chemical-vapor deposition with indium as the antisurfactant Zhang, J. Hao, M. Li, P. Chua, S.J. ELECTRICAL & COMPUTER ENGINEERING 10.1063/1.1433163 Applied Physics Letters 80 3 485-487 APPLA 2014-06-17T02:53:27Z 2014-06-17T02:53:27Z 2002-01-21 Article Zhang, J., Hao, M., Li, P., Chua, S.J. (2002-01-21). InGaN self-assembled quantum dots grown by metalorganic chemical-vapor deposition with indium as the antisurfactant. Applied Physics Letters 80 (3) : 485-487. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1433163 00036951 http://scholarbank.nus.edu.sg/handle/10635/56337 000173278400049 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
description 10.1063/1.1433163
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Zhang, J.
Hao, M.
Li, P.
Chua, S.J.
format Article
author Zhang, J.
Hao, M.
Li, P.
Chua, S.J.
spellingShingle Zhang, J.
Hao, M.
Li, P.
Chua, S.J.
InGaN self-assembled quantum dots grown by metalorganic chemical-vapor deposition with indium as the antisurfactant
author_sort Zhang, J.
title InGaN self-assembled quantum dots grown by metalorganic chemical-vapor deposition with indium as the antisurfactant
title_short InGaN self-assembled quantum dots grown by metalorganic chemical-vapor deposition with indium as the antisurfactant
title_full InGaN self-assembled quantum dots grown by metalorganic chemical-vapor deposition with indium as the antisurfactant
title_fullStr InGaN self-assembled quantum dots grown by metalorganic chemical-vapor deposition with indium as the antisurfactant
title_full_unstemmed InGaN self-assembled quantum dots grown by metalorganic chemical-vapor deposition with indium as the antisurfactant
title_sort ingan self-assembled quantum dots grown by metalorganic chemical-vapor deposition with indium as the antisurfactant
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/56337
_version_ 1821226937580781568