Metal gate technology for nanoscale transistors - Material selection and process integration issues
10.1016/j.tsf.2004.05.039
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sg-nus-scholar.10635-566072024-11-08T16:45:12Z Metal gate technology for nanoscale transistors - Material selection and process integration issues Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING High-k dielectric materials Metal gate Transistor Work function 10.1016/j.tsf.2004.05.039 Thin Solid Films 462-463 SPEC. ISS. 34-41 THSFA 2014-06-17T02:56:31Z 2014-06-17T02:56:31Z 2004-09 Article Yeo, Y.-C. (2004-09). Metal gate technology for nanoscale transistors - Material selection and process integration issues. Thin Solid Films 462-463 (SPEC. ISS.) : 34-41. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2004.05.039 00406090 http://scholarbank.nus.edu.sg/handle/10635/56607 000223812800009 Scopus |
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High-k dielectric materials Metal gate Transistor Work function |
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High-k dielectric materials Metal gate Transistor Work function Yeo, Y.-C. Metal gate technology for nanoscale transistors - Material selection and process integration issues |
description |
10.1016/j.tsf.2004.05.039 |
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ELECTRICAL & COMPUTER ENGINEERING |
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ELECTRICAL & COMPUTER ENGINEERING Yeo, Y.-C. |
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Article |
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Yeo, Y.-C. |
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Yeo, Y.-C. |
title |
Metal gate technology for nanoscale transistors - Material selection and process integration issues |
title_short |
Metal gate technology for nanoscale transistors - Material selection and process integration issues |
title_full |
Metal gate technology for nanoscale transistors - Material selection and process integration issues |
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Metal gate technology for nanoscale transistors - Material selection and process integration issues |
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Metal gate technology for nanoscale transistors - Material selection and process integration issues |
title_sort |
metal gate technology for nanoscale transistors - material selection and process integration issues |
publishDate |
2014 |
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http://scholarbank.nus.edu.sg/handle/10635/56607 |
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