Minimization of germanium penetration, nanocrystal formation, charge storage, and retention in a trilayer memory structure with silicon nitride/hafnium dioxide stack as the tunnel dielectric

Minimization of germanium penetration, nanocrystal formation, charge storage, and retention in a trilayer memory structure with silicon nitride/hafnium dioxide stack as the tunnel dielectric

10.1063/1.1757022

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Bibliographic Details
Main Authors: Ng, T.H., Chim, W.K., Choi, W.K., Ho, V., Teo, L.W., Du, A.Y., Tung, C.H.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/56642
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Institution: National University of Singapore
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Summary:10.1063/1.1757022

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