Minimization of germanium penetration, nanocrystal formation, charge storage, and retention in a trilayer memory structure with silicon nitride/hafnium dioxide stack as the tunnel dielectric

10.1063/1.1757022

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Bibliographic Details
Main Authors:	Ng, T.H., Chim, W.K., Choi, W.K., Ho, V., Teo, L.W., Du, A.Y., Tung, C.H.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/56642
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-56642
record_format	dspace
spelling	sg-nus-scholar.10635-566422023-08-29T21:13:28Z Minimization of germanium penetration, nanocrystal formation, charge storage, and retention in a trilayer memory structure with silicon nitride/hafnium dioxide stack as the tunnel dielectric Ng, T.H. Chim, W.K. Choi, W.K. Ho, V. Teo, L.W. Du, A.Y. Tung, C.H. ELECTRICAL & COMPUTER ENGINEERING 10.1063/1.1757022 Applied Physics Letters 84 22 4385-4387 APPLA 2014-06-17T02:56:55Z 2014-06-17T02:56:55Z 2004-05-31 Article Ng, T.H., Chim, W.K., Choi, W.K., Ho, V., Teo, L.W., Du, A.Y., Tung, C.H. (2004-05-31). Minimization of germanium penetration, nanocrystal formation, charge storage, and retention in a trilayer memory structure with silicon nitride/hafnium dioxide stack as the tunnel dielectric. Applied Physics Letters 84 (22) : 4385-4387. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1757022 00036951 http://scholarbank.nus.edu.sg/handle/10635/56642 000221537500009 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1063/1.1757022
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Ng, T.H. Chim, W.K. Choi, W.K. Ho, V. Teo, L.W. Du, A.Y. Tung, C.H.
format	Article
author	Ng, T.H. Chim, W.K. Choi, W.K. Ho, V. Teo, L.W. Du, A.Y. Tung, C.H.
spellingShingle	Ng, T.H. Chim, W.K. Choi, W.K. Ho, V. Teo, L.W. Du, A.Y. Tung, C.H. Minimization of germanium penetration, nanocrystal formation, charge storage, and retention in a trilayer memory structure with silicon nitride/hafnium dioxide stack as the tunnel dielectric
author_sort	Ng, T.H.
title	Minimization of germanium penetration, nanocrystal formation, charge storage, and retention in a trilayer memory structure with silicon nitride/hafnium dioxide stack as the tunnel dielectric
title_short	Minimization of germanium penetration, nanocrystal formation, charge storage, and retention in a trilayer memory structure with silicon nitride/hafnium dioxide stack as the tunnel dielectric
title_full	Minimization of germanium penetration, nanocrystal formation, charge storage, and retention in a trilayer memory structure with silicon nitride/hafnium dioxide stack as the tunnel dielectric
title_fullStr	Minimization of germanium penetration, nanocrystal formation, charge storage, and retention in a trilayer memory structure with silicon nitride/hafnium dioxide stack as the tunnel dielectric
title_full_unstemmed	Minimization of germanium penetration, nanocrystal formation, charge storage, and retention in a trilayer memory structure with silicon nitride/hafnium dioxide stack as the tunnel dielectric
title_sort	minimization of germanium penetration, nanocrystal formation, charge storage, and retention in a trilayer memory structure with silicon nitride/hafnium dioxide stack as the tunnel dielectric
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/56642
_version_	1775627264612892672

Minimization of germanium penetration, nanocrystal formation, charge storage, and retention in a trilayer memory structure with silicon nitride/hafnium dioxide stack as the tunnel dielectric

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