N-xhannel GaAs MOSFET with TaNHfAlO gate stack formed using in situ vacuum anneal and silane passivation

10.1149/1.2907381

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Bibliographic Details
Main Authors:	Chin, H.-C., Zhu, M., Samudra, G.S., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/56846
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Institution:	National University of Singapore

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Summary:	10.1149/1.2907381

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