N-xhannel GaAs MOSFET with TaNHfAlO gate stack formed using in situ vacuum anneal and silane passivation

N-xhannel GaAs MOSFET with TaNHfAlO gate stack formed using in situ vacuum anneal and silane passivation

10.1149/1.2907381

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Bibliographic Details
Main Authors: Chin, H.-C., Zhu, M., Samudra, G.S., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/56846
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/56846

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