On the electrical stress-induced oxide-trapped charges in thin Hf O2 Si O2 gate dielectric stack

On the electrical stress-induced oxide-trapped charges in thin Hf O2 Si O2 gate dielectric stack

10.1063/1.2783967

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Bibliographic Details
Main Authors: Samanta, P., Zhu, C., Chan, M.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/56893
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Institution: National University of Singapore
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Summary:10.1063/1.2783967

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