Self-consistent Schrödinger-Poisson simulations on capacitance-voltage characteristics of silicon nanowire gate-all-around MOS devices with experimental comparisons

IEEE Transactions on Electron Devices

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Bibliographic Details
Main Authors:	Chin, S.K., Ligatchev, V., Rustagi, S.C., Zhao, H., Samudra, G.S., Singh, N., Lo, G.Q., Kwong, D.-L.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Capacitance Gate-all-around MOS Schrödinger-Poisson (SP) Silicon (Si) nanowire
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/57365
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Institution:	National University of Singapore

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spelling	sg-nus-scholar.10635-573652023-08-25T08:21:46Z Self-consistent Schrödinger-Poisson simulations on capacitance-voltage characteristics of silicon nanowire gate-all-around MOS devices with experimental comparisons Chin, S.K. Ligatchev, V. Rustagi, S.C. Zhao, H. Samudra, G.S. Singh, N. Lo, G.Q. Kwong, D.-L. ELECTRICAL & COMPUTER ENGINEERING Capacitance Gate-all-around MOS Schrödinger-Poisson (SP) Silicon (Si) nanowire IEEE Transactions on Electron Devices 56 10 2312-2318 IETDA 2014-06-17T03:05:22Z 2014-06-17T03:05:22Z 2009 Article Chin, S.K., Ligatchev, V., Rustagi, S.C., Zhao, H., Samudra, G.S., Singh, N., Lo, G.Q., Kwong, D.-L. (2009). Self-consistent Schrödinger-Poisson simulations on capacitance-voltage characteristics of silicon nanowire gate-all-around MOS devices with experimental comparisons. IEEE Transactions on Electron Devices 56 (10) : 2312-2318. ScholarBank@NUS Repository. 00189383 http://scholarbank.nus.edu.sg/handle/10635/57365 000270036300019 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Capacitance Gate-all-around MOS Schrödinger-Poisson (SP) Silicon (Si) nanowire
spellingShingle	Capacitance Gate-all-around MOS Schrödinger-Poisson (SP) Silicon (Si) nanowire Chin, S.K. Ligatchev, V. Rustagi, S.C. Zhao, H. Samudra, G.S. Singh, N. Lo, G.Q. Kwong, D.-L. Self-consistent Schrödinger-Poisson simulations on capacitance-voltage characteristics of silicon nanowire gate-all-around MOS devices with experimental comparisons
description	IEEE Transactions on Electron Devices
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Chin, S.K. Ligatchev, V. Rustagi, S.C. Zhao, H. Samudra, G.S. Singh, N. Lo, G.Q. Kwong, D.-L.
format	Article
author	Chin, S.K. Ligatchev, V. Rustagi, S.C. Zhao, H. Samudra, G.S. Singh, N. Lo, G.Q. Kwong, D.-L.
author_sort	Chin, S.K.
title	Self-consistent Schrödinger-Poisson simulations on capacitance-voltage characteristics of silicon nanowire gate-all-around MOS devices with experimental comparisons
title_short	Self-consistent Schrödinger-Poisson simulations on capacitance-voltage characteristics of silicon nanowire gate-all-around MOS devices with experimental comparisons
title_full	Self-consistent Schrödinger-Poisson simulations on capacitance-voltage characteristics of silicon nanowire gate-all-around MOS devices with experimental comparisons
title_fullStr	Self-consistent Schrödinger-Poisson simulations on capacitance-voltage characteristics of silicon nanowire gate-all-around MOS devices with experimental comparisons
title_full_unstemmed	Self-consistent Schrödinger-Poisson simulations on capacitance-voltage characteristics of silicon nanowire gate-all-around MOS devices with experimental comparisons
title_sort	self-consistent schrödinger-poisson simulations on capacitance-voltage characteristics of silicon nanowire gate-all-around mos devices with experimental comparisons
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/57365
_version_	1775627383868489728

Self-consistent Schrödinger-Poisson simulations on capacitance-voltage characteristics of silicon nanowire gate-all-around MOS devices with experimental comparisons

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