Self-consistent Schrödinger-Poisson simulations on capacitance-voltage characteristics of silicon nanowire gate-all-around MOS devices with experimental comparisons
IEEE Transactions on Electron Devices
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Main Authors: | Chin, S.K., Ligatchev, V., Rustagi, S.C., Zhao, H., Samudra, G.S., Singh, N., Lo, G.Q., Kwong, D.-L. |
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Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Article |
Published: |
2014
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Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/57365 |
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Institution: | National University of Singapore |
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