Self-consistent Schrödinger-Poisson simulations on capacitance-voltage characteristics of silicon nanowire gate-all-around MOS devices with experimental comparisons

Self-consistent Schrödinger-Poisson simulations on capacitance-voltage characteristics of silicon nanowire gate-all-around MOS devices with experimental comparisons

IEEE Transactions on Electron Devices

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Bibliographic Details
Main Authors: Chin, S.K., Ligatchev, V., Rustagi, S.C., Zhao, H., Samudra, G.S., Singh, N., Lo, G.Q., Kwong, D.-L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Capacitance
Gate-all-around
MOS
Schrödinger-Poisson (SP)
Silicon (Si) nanowire
Online Access:http://scholarbank.nus.edu.sg/handle/10635/57365
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Institution: National University of Singapore

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