Tunable Oxide-Bypassed Trench Gate MOSFET: Breaking the Ideal Superjunction MOSFET Performance Line at Equal Column Width

10.1109/LED.2003.819268

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Bibliographic Details
Main Authors:	Yang, X., Liang, Y.C., Samudra, G.S., Liu, Y.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Breakdown voltage Ideal silicon limit Ideal superjunction limit Power superjunction MOSFET Specific on-resistance
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/57717
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-57717
record_format	dspace
spelling	sg-nus-scholar.10635-577172023-11-01T07:14:01Z Tunable Oxide-Bypassed Trench Gate MOSFET: Breaking the Ideal Superjunction MOSFET Performance Line at Equal Column Width Yang, X. Liang, Y.C. Samudra, G.S. Liu, Y. ELECTRICAL & COMPUTER ENGINEERING Breakdown voltage Ideal silicon limit Ideal superjunction limit Power superjunction MOSFET Specific on-resistance 10.1109/LED.2003.819268 IEEE Electron Device Letters 24 11 704-706 EDLED 2014-06-17T03:09:23Z 2014-06-17T03:09:23Z 2003-11 Article Yang, X., Liang, Y.C., Samudra, G.S., Liu, Y. (2003-11). Tunable Oxide-Bypassed Trench Gate MOSFET: Breaking the Ideal Superjunction MOSFET Performance Line at Equal Column Width. IEEE Electron Device Letters 24 (11) : 704-706. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2003.819268 07413106 http://scholarbank.nus.edu.sg/handle/10635/57717 000186402800010 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Breakdown voltage Ideal silicon limit Ideal superjunction limit Power superjunction MOSFET Specific on-resistance
spellingShingle	Breakdown voltage Ideal silicon limit Ideal superjunction limit Power superjunction MOSFET Specific on-resistance Yang, X. Liang, Y.C. Samudra, G.S. Liu, Y. Tunable Oxide-Bypassed Trench Gate MOSFET: Breaking the Ideal Superjunction MOSFET Performance Line at Equal Column Width
description	10.1109/LED.2003.819268
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Yang, X. Liang, Y.C. Samudra, G.S. Liu, Y.
format	Article
author	Yang, X. Liang, Y.C. Samudra, G.S. Liu, Y.
author_sort	Yang, X.
title	Tunable Oxide-Bypassed Trench Gate MOSFET: Breaking the Ideal Superjunction MOSFET Performance Line at Equal Column Width
title_short	Tunable Oxide-Bypassed Trench Gate MOSFET: Breaking the Ideal Superjunction MOSFET Performance Line at Equal Column Width
title_full	Tunable Oxide-Bypassed Trench Gate MOSFET: Breaking the Ideal Superjunction MOSFET Performance Line at Equal Column Width
title_fullStr	Tunable Oxide-Bypassed Trench Gate MOSFET: Breaking the Ideal Superjunction MOSFET Performance Line at Equal Column Width
title_full_unstemmed	Tunable Oxide-Bypassed Trench Gate MOSFET: Breaking the Ideal Superjunction MOSFET Performance Line at Equal Column Width
title_sort	tunable oxide-bypassed trench gate mosfet: breaking the ideal superjunction mosfet performance line at equal column width
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/57717
_version_	1781781463417487360

Tunable Oxide-Bypassed Trench Gate MOSFET: Breaking the Ideal Superjunction MOSFET Performance Line at Equal Column Width

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