Tunable Oxide-Bypassed Trench Gate MOSFET: Breaking the Ideal Superjunction MOSFET Performance Line at Equal Column Width

• Main Authors: Yang, X., Liang, Y.C., Samudra, G.S., Liu, Y.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Breakdown voltage; Ideal silicon limit; Ideal superjunction limit; Power superjunction MOSFET; Specific on-resistance
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/57717
• Institution: National University of Singapore

10.1109/LED.2003.819268