Tuning the Schottky barrier height of nickel silicide on p -silicon by aluminum segregation

Tuning the Schottky barrier height of nickel silicide on p -silicon by aluminum segregation

10.1063/1.2940596

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Bibliographic Details
Main Authors: Sinha, M., Chor, E.F., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/57724
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Institution: National University of Singapore
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Summary:10.1063/1.2940596

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