Valence band structure of ultrathin silicon and germanium channels in metal-oxide-semiconductor field-effect transistors

10.1063/1.1948528

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Bibliographic Details
Main Authors:	Low, T., Li, M.F., Yeo, Y.C., Fan, W.J., Ng, S.T., Kwong, D.L.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/57768
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Institution:	National University of Singapore

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spelling	sg-nus-scholar.10635-577682024-11-10T17:48:02Z Valence band structure of ultrathin silicon and germanium channels in metal-oxide-semiconductor field-effect transistors Low, T. Li, M.F. Yeo, Y.C. Fan, W.J. Ng, S.T. Kwong, D.L. ELECTRICAL & COMPUTER ENGINEERING 10.1063/1.1948528 Journal of Applied Physics 98 2 - JAPIA 2014-06-17T03:09:58Z 2014-06-17T03:09:58Z 2005-07-15 Article Low, T., Li, M.F., Yeo, Y.C., Fan, W.J., Ng, S.T., Kwong, D.L. (2005-07-15). Valence band structure of ultrathin silicon and germanium channels in metal-oxide-semiconductor field-effect transistors. Journal of Applied Physics 98 (2) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1948528 00218979 http://scholarbank.nus.edu.sg/handle/10635/57768 000230931500105 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1063/1.1948528
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Low, T. Li, M.F. Yeo, Y.C. Fan, W.J. Ng, S.T. Kwong, D.L.
format	Article
author	Low, T. Li, M.F. Yeo, Y.C. Fan, W.J. Ng, S.T. Kwong, D.L.
spellingShingle	Low, T. Li, M.F. Yeo, Y.C. Fan, W.J. Ng, S.T. Kwong, D.L. Valence band structure of ultrathin silicon and germanium channels in metal-oxide-semiconductor field-effect transistors
author_sort	Low, T.
title	Valence band structure of ultrathin silicon and germanium channels in metal-oxide-semiconductor field-effect transistors
title_short	Valence band structure of ultrathin silicon and germanium channels in metal-oxide-semiconductor field-effect transistors
title_full	Valence band structure of ultrathin silicon and germanium channels in metal-oxide-semiconductor field-effect transistors
title_fullStr	Valence band structure of ultrathin silicon and germanium channels in metal-oxide-semiconductor field-effect transistors
title_full_unstemmed	Valence band structure of ultrathin silicon and germanium channels in metal-oxide-semiconductor field-effect transistors
title_sort	valence band structure of ultrathin silicon and germanium channels in metal-oxide-semiconductor field-effect transistors
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/57768
_version_	1821216842389127168

Valence band structure of ultrathin silicon and germanium channels in metal-oxide-semiconductor field-effect transistors

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