Valence band structure of ultrathin silicon and germanium channels in metal-oxide-semiconductor field-effect transistors

Valence band structure of ultrathin silicon and germanium channels in metal-oxide-semiconductor field-effect transistors

10.1063/1.1948528

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Bibliographic Details
Main Authors:	Low, T., Li, M.F., Yeo, Y.C., Fan, W.J., Ng, S.T., Kwong, D.L.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/57768
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Institution:	National University of Singapore

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