A steady state drain current technique for generation and recombination lifetime measurement in the SOI MOSFET

IEEE Transactions on Electron Devices

Saved in:

Bibliographic Details
Main Authors:	Cheng, Z.Y., Ling, C.H.
Other Authors:	ELECTRICAL ENGINEERING
Format:	Article
Published:	2014
Subjects:	Carrier generation lifetime Fullydepleted soi mosfet Recombination lifetime Steady state drain current technique
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/61717
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

id	sg-nus-scholar.10635-61717
record_format	dspace
spelling	sg-nus-scholar.10635-617172015-01-14T08:33:05Z A steady state drain current technique for generation and recombination lifetime measurement in the SOI MOSFET Cheng, Z.Y. Ling, C.H. ELECTRICAL ENGINEERING Carrier generation lifetime Fullydepleted soi mosfet Recombination lifetime Steady state drain current technique IEEE Transactions on Electron Devices 47 1 97102- IETDA 2014-06-17T06:43:12Z 2014-06-17T06:43:12Z 2000 Article Cheng, Z.Y.,Ling, C.H. (2000). A steady state drain current technique for generation and recombination lifetime measurement in the SOI MOSFET. IEEE Transactions on Electron Devices 47 (1) : 97102-. ScholarBank@NUS Repository. 00189383 http://scholarbank.nus.edu.sg/handle/10635/61717 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
topic	Carrier generation lifetime Fullydepleted soi mosfet Recombination lifetime Steady state drain current technique
spellingShingle	Carrier generation lifetime Fullydepleted soi mosfet Recombination lifetime Steady state drain current technique Cheng, Z.Y. Ling, C.H. A steady state drain current technique for generation and recombination lifetime measurement in the SOI MOSFET
description	IEEE Transactions on Electron Devices
author2	ELECTRICAL ENGINEERING
author_facet	ELECTRICAL ENGINEERING Cheng, Z.Y. Ling, C.H.
format	Article
author	Cheng, Z.Y. Ling, C.H.
author_sort	Cheng, Z.Y.
title	A steady state drain current technique for generation and recombination lifetime measurement in the SOI MOSFET
title_short	A steady state drain current technique for generation and recombination lifetime measurement in the SOI MOSFET
title_full	A steady state drain current technique for generation and recombination lifetime measurement in the SOI MOSFET
title_fullStr	A steady state drain current technique for generation and recombination lifetime measurement in the SOI MOSFET
title_full_unstemmed	A steady state drain current technique for generation and recombination lifetime measurement in the SOI MOSFET
title_sort	steady state drain current technique for generation and recombination lifetime measurement in the soi mosfet
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/61717
_version_	1681085644352258048

A steady state drain current technique for generation and recombination lifetime measurement in the SOI MOSFET

Similar Items