A steady state drain current technique for generation and recombination lifetime measurement in the SOI MOSFET

A steady state drain current technique for generation and recombination lifetime measurement in the SOI MOSFET

IEEE Transactions on Electron Devices

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Bibliographic Details
Main Authors: Cheng, Z.Y., Ling, C.H.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Subjects:
Carrier generation lifetime
Fullydepleted soi mosfet
Recombination lifetime
Steady state drain current technique
Online Access:http://scholarbank.nus.edu.sg/handle/10635/61717
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/61717

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