A study of quasi-breakdown mechanism in ultrathin gate oxide under various types of stress

A study of quasi-breakdown mechanism in ultrathin gate oxide under various types of stress

Materials Research Society Symposium - Proceedings

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Bibliographic Details
Main Authors: Guan, H., Xu, Z., Cho, B.J., Li, M.F., He, Y.D.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/61719
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Institution: National University of Singapore
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Summary:Materials Research Society Symposium - Proceedings

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